????????????????????????????????????????????????????? SSFD4024 ? main product characteristics: v dss 40v r ds (on) 30 mohm i d 12a to-252 top view SSFD4024 ? features and benefits: ? advanced trench mosfet process technology ? special designed for conver tors and power controls ? ultra low on-resistance ? 175 operating temperature marking and pin assignment description: it utilizes the latest trench processi ng techniques to achieve extremely low on resistance, fast switching speed and high repetitive avalanche rating. these features combine to make this des ign an extremely efficient and reliable device for use in automotive applicati ons and a wide variety of other applications absolute max rating: parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 12 id @ tc = 100c continuous drain current, vgs @ 10v 12 idm pulsed drain current 30 a pd @tc = 25c power dissipation 20 w vgs gate-to-source voltage 20 v eas single pulse avalanche energy 22 mj iar avalanche current @ l=0.3mh 10 a tj tstg operating junction and st orage temperature range -55 to + 175 c thermal resistance symbol characterizes value unit r jc junction-to-case 7.5 /w junction-to-ambient 30 /w r ja junction-to-ambient (pcb mounted, steady-state) 60 /w ? silikron semiconductor co.,ltd. 2010.09.01 ve rsion : 1.0 page 1of4 www.silikron.com ? ?
????????????????????????????????????????????????????? SSFD4024 ? electrical characterizes @t a =25 unless otherwise specified parameter min. typ. max units conditions bvdss drain-to-source breakdown voltage 40 ? ? v vgs = 0v, id = 250 a rds(on) static drain-to-source on-resistance ? 24 30 m? vgs = 10v, id = 12a vgs(th) gate threshold voltage 1 ? 3 v vds = vgs, id = 250 a ? ? 1 vds = 40v, vgs = 0v idss drain-to-source leakage current ? ? 150 a vds = 40v, vgs = 0v, tj = 125c gate-to-source forward leakage ? ? ? ? 100 vgs = 20v igss gate-to-source reverse leakage ? ? ? ? -100 na vgs = -20v qg total gate charge ? ? 9.5 ? qgs gate-to-source charge ? ? 4.5 ? ? qgd gate-to-drain("miller") charge ? ? 1.5 ? ? nc id = 12a vds =20v vgs = 10v td(on) turn-on delay time ? ? 3.5 ? ? tr rise time ? ? 6 ? ? td(off) turn-off delay time ? ? 13.5 ? ? tf fall time ? ? 3.5 ? ? ns vdd = 20v id = 12a rg = 1.7 ? vgs = 10v ciss input capacitance ? ? 410 ? ? coss output capacitance ? ? 95 ? ? crss reverse transfer capacitance ? ? 35 ? ? pf vgs = 0v vds = 20v ? = 1.0mhz source-drain ratings and characteristics parameter min. typ. max units conditions is continuous source current (body diode) ? ? 12 a mosfet symbol showing the integral reverse p-n junction diode. vsd diode forward voltage ? 0.75 1.0 v tj = 25c, if = 1a, vdd = 20v di/dt = 100a/ s trr reverse recovery time ? 23 ? ns qrr reverse recovery charge ? 18.5 ? nc tj = 25c, if = 12a, vdd = 20v di/dt = 100a/ s ton forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ? silikron semiconductor co.,ltd. 2010.09.01 ve rsion : 1.0 page 2of4 www.silikron.com ? ?
????????????????????????????????????????????????????? SSFD4024 ? ? silikron semiconductor co.,ltd. 2010.09.01 ve rsion : 1.0 page 3of4 www.silikron.com ? ? notes: repetitive rating; pulse width limit ed by max. junction temperature. limited by tjmax, star ting tj = 25c, l = 0. 3mh rg =50 ? , ias = 82a, vgs =10v. part not recommended for use above this value. pulse width < 1.0ms; duty cycle<2%.
????????????????????????????????????????????????????? SSFD4024 ? mechanical data to-252e-2-m package information dimensions in millimeters ? silikron semiconductor co.,ltd. 2010.09.01 ve rsion : 1.0 page 4of4 www.silikron.com ? ? notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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